{"id":7813,"date":"2022-04-25T13:09:46","date_gmt":"2022-04-25T07:39:46","guid":{"rendered":"https:\/\/www.goseeko.com\/blog\/?p=7813"},"modified":"2026-04-20T21:48:47","modified_gmt":"2026-04-20T16:18:47","slug":"what-are-ce-cb-cc-transistor-configurations","status":"publish","type":"post","link":"https:\/\/www.goseeko.com\/blog\/what-are-ce-cb-cc-transistor-configurations\/","title":{"rendered":"What are CE CB CC transistor configurations?"},"content":{"rendered":"\n<p>There are three types of transistor configurations <mark><mark style=\"background-color:#ffffff\" class=\"has-inline-color\">CB<\/mark><\/mark><mark style=\"background-color:rgba(0, 0, 0, 0)\" class=\"has-inline-color has-white-color\"> <\/mark>(common base), CE (common emitter),  and CC (common collector). In the below section we will learn in detail about the CE CB CC transistor configurations along with their input and output characteristics.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Common Base (CB)<\/h2>\n\n\n\n<p>The notation and symbols of pnp and npn transistors are given below:<\/p>\n\n\n\n<figure class=\"wp-block-image\"><img decoding=\"async\" src=\"https:\/\/lh5.googleusercontent.com\/nuNXKPoGD9MyoeHeVkKmejYMqfHmknBA096iTJuoLCevKbxRF2zX52v9OGpt2QZ3Hg7iRCfif2wCAYH4qO0X40YCa-oahy8HfOioRbLZ2KyVIItBcvY2mUAZd6PIiqIm6C4q_eXN\" alt=\"\"\/><\/figure>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Here the base is common to both the input and output sides of the configuration.<\/li>\n\n\n\n<li>The flow of holes will govern the direction of current.<\/li>\n\n\n\n<li>Hence, Ic = Ib + Ie<\/li>\n\n\n\n<li>Where Ic, Ib, Ie are the collector, base and emitter currents respectively.<\/li>\n\n\n\n<li>The graphical symbol of the PNP common base configuration is\u00a0<\/li>\n<\/ul>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter\"><img decoding=\"async\" src=\"https:\/\/lh4.googleusercontent.com\/zLbGovBopQbJeIrs6hDxtegBdQ4I2OsCIK5KCuOL5atRTW9zkoqHeIkCe_qwoDU8ahKkExzBxkjvAF9gxO2h8pS7fGGmhzxgBBRqe-0J-jV8DO5VgrLLDj1qmShLctRveudg-XXw\" alt=\"\"\/><figcaption class=\"wp-element-caption\">Symbolic representation of PNP transistor<\/figcaption><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>The arrow in the above symbol shows the direction of emitter current in the device.<\/li>\n\n\n\n<li>Now, to study the behavior of the device we require two characteristics:<\/li>\n<\/ul>\n\n\n\n<p><strong>Input Characteristic Curve<\/strong> <strong>of CB<\/strong><\/p>\n\n\n\n<p class=\"has-text-align-center\"><strong><img loading=\"lazy\" decoding=\"async\" width=\"381\" height=\"260\" src=\"https:\/\/lh3.googleusercontent.com\/eyycIGV7E-ULj9aReguMZvJC4ZYvWVYeGxsUuvMz27fa4dOOZlCYEjqRxZZhfxifubIRSzYBpFn9uvPvrC90NeA7zLnakhqH9UuKAO9Sfnit4BiMq-U6FhjQk1Rqy_QyCmcj4evx\"><\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>It is the relation between the input current I<sub>E<\/sub> to the input voltage V<sub>BE<\/sub> for various levels of output voltage V<sub>CB<\/sub>.<\/li>\n\n\n\n<li>It is also known as driving point characteristics.<\/li>\n<\/ul>\n\n\n\n<p><strong>Output Characteristic Curve<\/strong> <strong>of CB<\/strong><\/p>\n\n\n\n<p class=\"has-text-align-center\"><strong><img loading=\"lazy\" decoding=\"async\" width=\"393\" height=\"230\" src=\"https:\/\/lh3.googleusercontent.com\/RJeiH0UGgiJ11o_x1Pp7RRs1Q6ej7bmQMGAspxTFFWKPgNcFdS1f2TN6PFtVrNhT6xkcEcMVIK-3HS_BVa-RHCXrhj7CCkOGgEjd0JMUdQVLmv1mMN1lwi8iFY-eRVEhqDf1jvle\"><\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>It is also the relation between the output current I<sub>C<\/sub> to the output voltage V<sub>CB<\/sub> for various levels of input current I<sub>E<\/sub>.<\/li>\n\n\n\n<li>Also known as the collector set of characteristics.<\/li>\n\n\n\n<li>Therefore, it has three basic regions:<\/li>\n<\/ul>\n\n\n\n<p><strong>Active Region<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Here, the base-emitter junction is forward biased and collector-base junction is reverse biased.<\/li>\n\n\n\n<li>Since the input current I<sub>E <\/sub>increases above zero, output current I<sub>C <\/sub>increases to a magnitude equal to I<sub>E<\/sub> as determined by the basic transistor current relationship.<\/li>\n\n\n\n<li>So, the first approximation determined by the curve is<\/li>\n<\/ul>\n\n\n\n<p>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; I<sub>C<\/sub> \u2248 I<sub>E<\/sub><\/p>\n\n\n\n<p><strong>Cut-off Region<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>It is defined as the region where the collector current I<sub>C<\/sub> is equal to 0A.<\/li>\n\n\n\n<li>Here, the base-emitter junction and the collector-base junction both are in reverse bias.<\/li>\n<\/ul>\n\n\n\n<p><strong>Saturation Region<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>It is the region that lies towards the left of V<sub>CB<\/sub> = 0V.<\/li>\n\n\n\n<li>Since the base-emitter junction and the collector-base junction both are in forward bias.<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Common Emitter Configuration (CE)<\/h2>\n\n\n\n<ul class=\"wp-block-list\">\n<li>The notation and symbols of npn and pnp transistors are given below:<\/li>\n<\/ul>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter\"><img decoding=\"async\" src=\"https:\/\/lh6.googleusercontent.com\/e9um6pFazEgM-e1IB-L30k9AIijSEM_JOy_dYQ_-ZKL-mfiVSH7MYWli6MDxM_WbM7NFq1TOQJX5IcRpg-f95SFjUPVogVWNbRHeOcBMsXITZRXbYHff9aw0hEs1OcoEzcCtYyzn\" alt=\"\"\/><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>In the above figure all the currents are shown in their actual conventional directions.<\/li>\n\n\n\n<li>The current relation developed earlier is still applicable,<\/li>\n\n\n\n<li>\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 I<sub>E<\/sub> = I<sub>B <\/sub>+ I<sub>C<\/sub><\/li>\n\n\n\n<li>Where I<sub>E<\/sub> , I<sub>B <\/sub>, I<sub>C<\/sub> are the collector, base and emitter currents respectively.<\/li>\n\n\n\n<li>The graphical symbol of the PNP common emitter configuration is<strong>\u00a0<\/strong><\/li>\n<\/ul>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter\"><img decoding=\"async\" src=\"https:\/\/lh5.googleusercontent.com\/QBHCMFQ_qCvBmm9wDeQOmjxNvJ85dqXtQjlFUhmE1fKlpFbAwwn3r37Ju5k7O3tLblQx-FwPcvlm3ddqNjXLMhz6CSpXgWRo907IOdu0H9y7xe1ZUDMPHf4Ukp2yqu7SaWbFVNpJ\" alt=\"\"\/><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>Now, to study the behavior of the device we require two characteristics:<\/li>\n<\/ul>\n\n\n\n<p><strong>Input Characteristic Curve<\/strong><\/p>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter is-resized\"><img decoding=\"async\" src=\"https:\/\/lh5.googleusercontent.com\/uuypzgBEDj-B3Wf-L-p3DBFk3-YGvplLD6VV4QNlv9bzOrzgfr6DM6IAV3r9bDRx_LO7SIFVuItAP4dAr1m8tran3RDXexhvfBovCzR7dj6W29gtu8i5lluIAqvTV0HduUmkuuDQ\" alt=\"\" style=\"width:289px;height:233px\"\/><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>It is the graph between the input current I<sub>B<\/sub> to the input voltage V<sub>BE<\/sub> for a range of values of output voltage V<sub>CE<\/sub>.<\/li>\n\n\n\n<li>Note that the magnitude I<sub>B<\/sub> of is in micro amperes and that of I<sub>C<\/sub> is in milli amperes.<\/li>\n<\/ul>\n\n\n\n<p><strong>Output Characteristic Curve<\/strong><\/p>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter is-resized\"><img decoding=\"async\" src=\"https:\/\/lh3.googleusercontent.com\/lQ88QMfJMl0JNWjZb-kREklHjGpwpzBnCeV4GGdXlYiid19A3_QWouRQMik97siZ3CH9UrK52uScLS-am8eYLFrCSL6HM1qMHWre3kO5WXZaYwkqp_8KWcah3aJ3mRq3CjoPk62W\" alt=\"\" style=\"width:-62px;height:-37px\"\/><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>It is the graph between the output current I<sub>C<\/sub> to the output voltage V<sub>CE<\/sub> for a range of values of input current I<sub>B<\/sub>.<\/li>\n\n\n\n<li>The three basic regions are:<\/li>\n<\/ul>\n\n\n\n<p><strong>Active Region<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Here, the base-emitter junction is forward biased and collector base junction is reverse biased.<\/li>\n\n\n\n<li>These are the same conditions that existed in the active region of the common base configuration.<\/li>\n\n\n\n<li>This can also be employed for voltage, current or power amplification.<\/li>\n<\/ul>\n\n\n\n<p><strong>Cut-off Region<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>Here I<sub>C<\/sub> is not equal to zero when I<sub>B<\/sub> is zero.<\/li>\n\n\n\n<li>For linear amplification purposes, it is defined as I<sub>C<\/sub> = I<sub>CEO<\/sub>.<\/li>\n\n\n\n<li>The region below I<sub>B<\/sub> = 0\u00b5A is to be avoided for undistorted output signals.<\/li>\n\n\n\n<li>When the transistor is used as a switch, the condition should be ideally I<sub>C<\/sub> = 0mA for a chosen V<sub>CE<\/sub> voltage.<\/li>\n<\/ul>\n\n\n\n<p><strong>Saturation Region<\/strong><\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>It is the region that lies towards the left of V<sub>CE<\/sub> = 0V.<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">Common Collector Configuration (CC)<\/h2>\n\n\n\n<p>The notation and symbols of npn and<a href=\"https:\/\/www.goseeko.com\/blog\/what-is-a-pn-junction-diode\/\"> pnp<\/a> transistors are given below:<\/p>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter is-resized\"><img decoding=\"async\" src=\"https:\/\/lh5.googleusercontent.com\/YlBYfrqQRyrM0GXzOFmFTw6O-lrgMa1HDHTOHqtfOZFRBz8MUDQce5vrfL-ffS6yexMECSI-BMFR0-Do3ZDgfB-fvXSErXTrQmbDDOpxKrmnnclyuwLcEy_T-H7gLaoCWXvw7kPt\" alt=\"\" style=\"width:481px;height:321px\"\/><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>In the above figure all the currents are shown in their actual conventional directions.<\/li>\n\n\n\n<li>It is used for <a href=\"https:\/\/en.wikipedia.org\/wiki\/Impedance_matching\">impedance matching<\/a> purposes as it has high input impedance and low output impedance.<\/li>\n\n\n\n<li>It can also be designed using common emitter characteristics.<\/li>\n\n\n\n<li>Then output characteristics of a common collector is the same as that of common emitter configuration for all practical purposes.<\/li>\n\n\n\n<li>Then output characteristics are a plot between\u00a0 I<sub>E<\/sub> versus V<sub>CE <\/sub>for all values of I<sub>B.<\/sub><\/li>\n\n\n\n<li>The input current of the common collector is also the same as that of common emitter configuration.<\/li>\n\n\n\n<li>Here the region of operation will ensure that maximum ratings are not being exceeded and also output ratings have minimum distortion.<\/li>\n<\/ul>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter is-resized\"><img decoding=\"async\" src=\"https:\/\/lh6.googleusercontent.com\/H93B4_i054rMw01RoZGWHXuMfrVzdCBDuSfcMMU0WtJ_LUTAwtMP2CMa02UHmhM0aAh3eswZZ35fiZfZV8hhON9qlV9nj6ComJ_2wm9bGjzAG71pBOwH1Su734SZBbWG_lpp9gXn\" alt=\"\" style=\"width:356px;height:271px\"\/><\/figure><\/div>\n\n\n<ul class=\"wp-block-list\">\n<li>The characteristics specifying the minimum V<sub>CE<\/sub> that can also be applied without entering the non-linear region is the saturation region.<\/li>\n\n\n\n<li>Then maximum power dissipation is given by, <strong><a href=\"https:\/\/www.bmich.com\/news\/\">https:\/\/www.bmich.com\/news\/<\/a><\/strong><\/li>\n<\/ul>\n\n\n\n<p>P = V<sub>CE<\/sub>. I<sub>C<\/sub><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The three basic transistor configuration are CE, CB and CC. A transistor is a three terminal device Emitter, Base and Collector.<\/p>\n","protected":false},"author":3,"featured_media":7827,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_jetpack_memberships_contains_paid_content":false,"footnotes":""},"categories":[37],"tags":[],"class_list":["post-7813","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-electronics"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v25.3.1 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>What are CE CB CC transistor configurations? - Goseeko blog<\/title>\n<meta name=\"description\" content=\"The CE, CB and CC are three basic transistor configurations. 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